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High Temperature SiC Process Furnaces
c.ACTIVATOR 150
c.ACTIVATOR 150
Description：
The centrotherm c.ACTIVATOR 150 high temperature furnace line has been developed for post implantation annealing of Silicon Carbide (SiC) or Gallium Nitride (GaN) devices. The Activator 150 is available in various versions as R&D and serial production furnace and offers a high process flexibility. The unique design of the centrotherm metal-free heating allows process temperatures up to 2000 °C and shorter process cycle times. c.ACTIVATOR 150 allows a cost-effective production due to its small footprint and low cost of ownership.
Applications : Annealing of SiC and GaN wafers, Graphene growth
Substrates : SiC, GaN, Saphire
Features
High activation rate
Minimal surface roughness
Temperatures up to 2000°C
Processing of wafer sizes from 2“ to 150 mm
Batch size 5 or 50 wafers
Heating rate up to 100 K/min
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